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Typical Characteristics T C = 25°C unless otherwise noted
200
100
10 μ s
300
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10ms
10
STARTING T J = 150 o C
STARTING T J = 25 o C
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
1
1
10
100
200
0.001
0.01 0.1 1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
80
T C = 25 o C
V GS = 10V
V GS = 7V
60
40
T J = 175 o C
60
40
V GS = 6V
PULSE DURATION = 80 μ s
20
0
T J = 25 o C
T J = -55 o C
20
0
DUTY CYCLE = 0.5% MAX
V GS = 5V
3.5
4.0
4.5 5.0 5.5 6.0
6.5
0
0.5
1.0 1.5 2.0 2.5
3.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
35
V GS = 6V
2.0
30
1.5
25
V GS = 10V
1.0
20
V GS = 10V, I D = 44A
15
0.5
0
10
20 30
40
50
-80
-40
0 40 80 120 160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
?2009 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDB3672_F085 Rev. A
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